(China (Mainland))
Product Summary
The PMV30UN is an ultra low level FET. Its applications include battery management, high-speed switches.
Parametrics
PMV30UN absolute maximum ratings: (1)VDS, drain-source voltage: 20V; (2)VDGR, drain-gate voltage: 20V; (3)VGS, gate-source voltage: ±8V; (4)ID, drain current: 5.7A//3.65A; (5)IDM, peak drain current: 23.1A; (6)Ptot total power dissipation: 1.9W; (7)Tstg, storage temperature: +150℃; (8)Tj, junction temperature: +150℃.
Features
PMV30UN features: (1)Surface mount package; (2)Fast switching.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 PMV30UN |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
 |
PMV30UN,215 |
NXP Semiconductors |
MOSFET N-CH TRENCH 20V |
Data Sheet |
|
|
||||||||||||
