Product Summary

The 2SK2916 is a TOSHIBA field effect transistor designed for DC-DC converter, relay drive and motor drive applications.

Parametrics

Maximum ratings: (1)Drain–source voltage, VDSS: 500 V; (2)Drain–gate voltage (RGS = 20 kΩ), VDGR: 500V; (3)Gate–source voltage, VGSS: ±30 V; (4)Drain current: DC, ID: 14 A; Pulse, IDP: 56 A; (5)Drain power dissipation (Tc = 25℃), PD: 80 W; (6)Single pulse avalanche energy, EAS: 795 mJ; (7)Avalanche current, IAR: 14 A; (8)Repetitive avalanche energy, EAR: 8 mJ; (9)Channel temperature, Tch: 150 ℃; (10)Storage temperature range, Tstg: -55~150 ℃.

Features

Features: (1)Low drain–source ON resistance: RDS (ON) = 0.35 Ω (typ.); (2)High forward transfer admittance: |Yfs| = 11 S (typ.); (3)Low leakage current: IDSS = 100 μA (max) (VDS = 500 V); (4)Enhancement–mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA).

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
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2SK2916
2SK2916


MOSFET N-CH 500V 14A TO-3PN

Data Sheet

Negotiable 
2SK2916(F)
2SK2916(F)

Toshiba

MOSFET N-ch 500V 14A 0.4 ohm

Data Sheet

Negotiable