(China (Mainland))
Product Summary
The M306N4FGTFP MCU is built using the high-performance silicon gate CMOS process using the M16C/60 Series CPU core and are packaged in 100-pin plastic molded QFP and LQFP. This MCU operates using sophisticated instructions featuring a high level of instruction efficiency.
Parametrics
M306N4FGTFP absolute maximum ratings: (1)Supply voltage (VCC1 = VCC2): -0.3 to 6.5 V; (2)Analog supply voltage: -0.3 to 6.5 V; (3)Input voltage: -0.3 to VCC+0.3 V; (4)Output voltage: -0.3 to VCC+0.3 V; (5)Power dissipation: 700 mW at Topr=25 ℃; (6)Operating ambient temperature During MCU operation: -40 to 85 ℃, During flash memory program and erase operation: -40 to 125 ℃; (7)Storage temperature: -65 to 150 ℃.
Features
M306N4FGTFP features: (1)Program Memory Size 256KB (256K x 8) ; (2)RAM Size 10K x 8 ; (3)Number of I /O 85 ; (4)Package / Case 100-BQFP ; (5)Speed 20MHz ; (6)Oscillator Type Internal ; (7)Packaging Tray ; (8)Program Memory Type FLASH.
Diagrams
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Pricing (USD) |
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 M306N4FGTFP |
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IC M16C MCU FLASH 100QFP |
Data Sheet |
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M306N4FGTFP#U0 |
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MCU 5V 256K T-TEMP PB-FREE 100-Q |
Data Sheet |
Negotiable |
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M306N4FGTFP#UKJ |
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IC M16C/6N4 MCU FLASH 100QFP |
Data Sheet |
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