(China (Mainland))
Product Summary
The FDC638P is a P-Channel 2.5V PowerTrench Specified MOSFET. It is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. The FDC638P is well suited for battery power.The applications of the FDC638P are load switching and power management, battery charging circuits, and DC/DC conversion.
Parametrics
FDC638P absolute maximum ratings: (1)Drain-Source Voltage:–20V ; (2)Gate-Source Voltage:±8V ; (3)Drain Current: Continuous:-4.5A, Pulsed:-20A; (4)Power Dissipation for Single Operation:1.6W or 0.8W; (5)Operating and Storage Junction Temperature Range:–55℃ to +150℃.
Features
FDC638P features: (1)-4.5A, -20V. RDS(ON)=48mW @ VGS=-4.5V, RDS(ON)=65mW @ VGS=-2.5V ; (2)Low gate charge (10 nC typical) ; (3)High performance trench technology for extremely ; (4)low RDS(ON) ; (5)SuperSOT–6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick) .
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 FDC638P |
Fairchild Semiconductor |
MOSFET SSOT-6 P-CH -20V |
Data Sheet |
|
|
||||||||||||
 |
FDC638P_Q |
Fairchild Semiconductor |
MOSFET SSOT-6 P-CH -20V |
Data Sheet |
|
|
||||||||||||
