(China (Mainland))
Product Summary
The IRG4PC40UD is an Insulated Gate Bipolar Transistor (IGBT). In spite of its similarity to the cross-section of a power MOSFET, operating of the two transistors is fundamentally different, the IGBT being a minority carrier device.
Parametrics
Absolute maximum ratings: (1)Bias: Vce = 100% of maximum rated, V(BR)CES up to 500V: 500V for all devices with rated V(BR)CES DUT greater than 500V; (2)Temperature: 85℃ BIAS; (3)Relative Humidity: 85%; (4)Duration: 2000 Hours nominal.
Features
Features: the physical operation of the IGBT is closer to that of a bipolar transistor than to that of a power MOSFET.
Diagrams
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 IRG4PC40UD |
International Rectifier |
IGBT W/DIODE 600V 40A TO-247AC |
Data Sheet |
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IRG4PC40UD-EPBF |
International Rectifier |
IGBT Transistors 600V UltraFast 8-60kHz |
Data Sheet |
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IRG4PC40UDPBF |
International Rectifier |
IGBT Transistors 600V UltraFast 8-60kHz |
Data Sheet |
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