(China (Mainland))
Product Summary
The TE28F800B3TA110 is a smart advanced boot block flash memory.
Parametrics
TE28F800B3TA110 absolute maximum ratings: (1)Extended Operating Temperature: During Read: –40 ℃ to +85 ℃, During Block Erase and Program: –40 ℃ to +85 ℃, Temperature Under Bias: –40 ℃ to +85 ℃; (2)Storage Temperature: –65 ℃ to +125 ℃; (3)Voltage on Any Pin (except VCC, VCCQ and VPP) with Respect to GND: –0.5 V to 3.7 V; (4)VPP Voltage (for Block Erase and Program) with Respect to GND: –0.5 V to +13.5 V; (5)VCC and VCCQ Supply Voltage with Respect to GND: –0.2 V to +3.7 V; (6)Output Short Circuit Current: 100 mA.
Features
TE28F800B3TA110 features: (1)Flexible SmartVoltage Technology: 2.7 V-3.6 V Read/Program/Erase, 12 V VPP Fast Production Programming; (2)2.7 V or 1.65 V I/O Option: Reduces Overall System Power; (3)High Performance: 2.7 V-3.6 V: 90 ns Max Access Time, 3.0 V-3.6 V: 80 ns Max Access Time; (4)Optimized Block Sizes: Eight 8-KB Blocks for Data, Top or Bottom Locations, Up to Sixty-Three 64-KB Blocks for Code; (5)Block Locking: VCC-Level Control through WP#; (6)Low Power Consumption: 10 mA Typical Read Current; (7)Absolute Hardware-Protection: VPP = GND Option, VCC Lockout Voltage.
Diagrams
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 TE28F004S3-150 |
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TE28F004S5-100 |
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TE28F004SC-100 |
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TE28F008B3B120 |
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Negotiable |
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TE28F008B3BA110 |
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Negotiable |
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TE28F008SA-100 |
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Negotiable |
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