(China (Mainland))
Product Summary
The TE28F160S570 is a FlashFile memory. It provides density upgrades with pinout compatibility for the 16- and 32-Mbit densities. The TE28F160S570 is a highperformance memory which is arranged as 1 Mword and 2 Mwords of 16 bits or 2 Mbyte and 4 Mbyte of 8 bits. This data is grouped in thirty-two and sixtyfour 64-Kbyte blocks that can be erased, locked and unlocked in-system.
Parametrics
TE28F160S570 absolute maximum ratings: (1)Temperature under Bias: –40℃ to +85℃; (2)Storage Temperature: –65℃ to +125℃; (3)Voltage On Any Pin (except VCC and VPP ): –0.5V to + VCC +0.5V; (4)VCC Supply Voltage: –0.2V to + VCC+0.5V; (5)VPP Update Voltage during Block Erase, Flash Write, and Lock-Bit Configuration: –0.2V to +7.0V; (6)Output Short Circuit Current: 100 mA.
Features
TE28F160S570 features: (1)Two 32-Byte Write Buffers: 2.7 μs per Byte Effective Programming Time; (2)Low Voltage Operation: 2.7V or 3.3V VCC, 2.7V, 3.3V or 5V VPP; (3)100 ns Read Access Time (16 Mbit), 110 ns Read Access Time (32 Mbit); (4)High-Density Symmetrically-Blocked Architecture: 32 64-Kbyte Erase Blocks (16 Mbit), 64 64-Kbyte Erase Blocks (32 Mbit); (5)System Performance Enhancements: STS Status Output.
Diagrams
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TE28F008SA-100 |
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