(China (Mainland))
Product Summary
The SOT-223 is a NPN Silicon RF Transistor.
Parametrics
BFG193 maximum ratings: (1)Collector-emitter voltage VCEO 12 V; (2)Collector-emitter voltage VCES 20; (3)Collector-base voltage VCBO 20; (4)Emitter-base voltage VEBO 2; (5)Collector current IC 80 mA; (6)Base current IB 10 mA; (7)Junction temperature Tj 150 ℃; (8)Ambient temperature TA - 65 to + 150 ℃; (9)Storage temperature Tstg - 65 to + 150 ℃.
Features
BFG193 features: (1)For low noise, high-gain amplifiers up to 2GHz; (2)For linear broadband amplifiers; (3)fT = 8GHz. F = 1.3dB at 900MHz.
Diagrams
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 BFG193 |
Other |
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Data Sheet |
Negotiable |
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BFG10 |
Other |
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Data Sheet |
Negotiable |
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BFG10,215 |
NXP Semiconductors |
Transistors RF Bipolar Small Signal Single NPN 8V 250mA 400mW 25 |
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BFG10/X |
Other |
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Data Sheet |
Negotiable |
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BFG10/X,215 |
NXP Semiconductors |
Transistors RF Bipolar Small Signal Single NPN 8V 250mA 400mW 25 |
Data Sheet |
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BFG10W |
Other |
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Data Sheet |
Negotiable |
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BFG10W/X T/R |
NXP Semiconductors |
Transistors RF Bipolar Small Signal TAPE-7 TNS-RFSS |
Data Sheet |
Negotiable |
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