Product Summary
The BC807-40W is a PNP surface mount transistor.
Parametrics
BC807-40W absolute maximum ratings: (1)Collector-emitter voltage, VCEO: -45V; (2)Emitter-base voltage, VEBO: -5.0V; (3)Collector current, IC: -500mA; (4)Peak collector current, ICM: -1000mA; (5)Peak emitter current, IEM: -1000mA; (6)Power dissipation at TSB=50℃, Pd: 200mW; (7)Thermal resistance, junction to ambient air, RJA: 625 ℃/W; (8)Operaing and storage temperature range, Tj, TSTG: -65 to +150℃.
Features
BC807-40W features: (1)Ideally suited for automatic insertion; (2)Epitaxial planar die construction; (3)For switching, AF driver and amplifier applications; (4)Complementary NPN types available; (5)Lead free by design/RoHS compliant; (6)"Green" device.
Diagrams

| Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
![]() BC807-40W |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|
||||||||||||
![]() |
![]() BC807-40W /T3 |
![]() NXP Semiconductors |
![]() Transistors Bipolar (BJT) TRANS GP TAPE-11 |
![]() Data Sheet |
![]() Negotiable |
|
||||||||||||
![]() |
![]() BC807-40W,115 |
![]() NXP Semiconductors |
![]() Transistors Bipolar (BJT) TRANS GP TAPE-7 |
![]() Data Sheet |
![]()
|
|
||||||||||||
![]() |
![]() BC807-40W-7 |
![]() Diodes Inc. |
![]() Transistors Bipolar (BJT) PNP SURFACE MOUNT TRANSISTOR |
![]() Data Sheet |
![]()
|
|
||||||||||||
![]() |
![]() BC807-40W,135 |
![]() NXP Semiconductors |
![]() Transistors Bipolar (BJT) TRANS GP TAPE-11 |
![]() Data Sheet |
![]()
|
|
||||||||||||
![]() |
![]() BC807-40W T/R |
![]() NXP Semiconductors |
![]() Transistors Bipolar (BJT) TRANS GP TAPE-7 |
![]() Data Sheet |
![]() Negotiable |
|
||||||||||||
![]() |
![]() BC807-40WT1G |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) SS SC70 GP XSTR PNP 45V |
![]() Data Sheet |
![]()
|
|
||||||||||||
(China (Mainland))












