(China (Mainland))
Product Summary
The BAT60B is a Silicon Schottky Diode.
Parametrics
BAT60B absolute maxing ratings: (1)Diode reverse voltage VR: 10V; (2)Forward current IF: 3A; (3)Surge forward current (t < 10ms) IFSM: 5A; (4)Total power dissipation, TS = 28℃ Ptot: 1350mW; (5)Junction temperature Tj: 150℃; (6)Storage temperature Tstg: -55 to 150℃.
Features
BAT60B features: (1)High current rectifier Schottky diode with low VF drop; (2)Low voltage, low inductance; (3)For power supply; (4)For detection and step-up-conversion.
Diagrams
| Image | Part No | Mfg | Description |  |
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 BAT60B |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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BAT60-08S |
Other |
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Data Sheet |
Negotiable |
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BAT60A |
Other |
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Data Sheet |
Negotiable |
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BAT60B |
Other |
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Data Sheet |
Negotiable |
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BAT60J |
Other |
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Data Sheet |
Negotiable |
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BAT60JFILM |
STMicroelectronics |
Schottky (Diodes & Rectifiers) 3.0 Amp 10 Volt |
Data Sheet |
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BAT62 |
Other |
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Data Sheet |
Negotiable |
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