Product Summary
The BAS40-04LT1G is a Schottky barrier diode.
Parametrics
BAS40-04LT1G absolute maximum ratings: (1)Reverse voltage, VR: 40V; (2)Forward power dissipation, PF: 225mW; (3)Operating junction and storage temperature range, TJ, TSTG: -55 to 150℃; (4)Forward continuous current, IFM: 120mA; (5)Single forward current, IFSM: 200mA; (6)Thermal resistance, RJA: 508℃/W.
Features
BAS40-04LT1G features: (1)Extremely fast switching speed; (2)Low forward voltage; (3)AEC qualified and PPAP capable; (4)S prefix for automotive and other applications requiring unique site and control change requirements; (5)These devices are Pb-free, Halogen Free/BFR free and are RoHS compliant.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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BAS40-04LT1G |
ON Semiconductor |
Schottky (Diodes & Rectifiers) 40V 225mW Dual |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
BAS40 |
Taiwan Semiconductor |
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Data Sheet |
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BAS40 /T3 |
NXP Semiconductors |
Schottky (Diodes & Rectifiers) DIODE SCHTKY TAPE-11 |
Data Sheet |
Negotiable |
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BAS40 SERIES |
Other |
Data Sheet |
Negotiable |
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BAS40,215 |
NXP Semiconductors |
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Data Sheet |
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BAS40,235 |
NXP Semiconductors |
Schottky (Diodes & Rectifiers) DIODE SCHTKY TAPE-11 |
Data Sheet |
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BAS40/04/05/06 |
Other |
Data Sheet |
Negotiable |
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