Product Summary

The AO3413L is a P-Channel Enhancement Mode Field Effect Transistor. It uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. The AO3413L is suitable for use as a load switch or in PWM applications.

Parametrics

AO3413L absolute maximum ratings: (1)Drain-Source Voltage: -20 V; (2)Gate-Source Voltage: ±8 V; (3)Continuous Drain Current: -3 A at TA=25 ℃, -2.4 A at TA=70 ℃; (4)Pulsed Drain Current: -15 A; (5)Power Dissipation: 1.4 W at TA=25 ℃, 0.9 W at TA=70 ℃; (6)Junction and Storage Temperature Range: -55 to 150 ℃.

Features

AO3413L features: (1)VDS (V) = -20V; (2)ID = -3 A; (3)RDS(ON) < 97mΩ (VGS = -4.5V); (4)RDS(ON) < 130mΩ (VGS = -2.5V); (5)RDS(ON) < 190mΩ (VGS = -1.8V).

Diagrams

AO3400
AO3400
Other

Data Sheet
Negotiable 
AO3400A
AO3400A

MOSFET N-CH 30V 5.7A SOT23
Data Sheet
0-1: $0.29
1-25: $0.19
25-100: $0.16
100-250: $0.13
250-500: $0.11
500-1000: $0.08
AO3401
AO3401
Other

Data Sheet
Negotiable 
AO3401A
AO3401A

MOSFET P-CH -30V -4.3A SOT23
Data Sheet
0-1: $0.27
1-25: $0.18
25-100: $0.15
100-250: $0.12
250-500: $0.10
500-1000: $0.07
AO3402
AO3402

MOSFET N-CH 30V 4.0A SOT23
Data Sheet
0-3000: $0.06
3000-6000: $0.06
6000-12000: $0.05
AO3402L
AO3402L
Other

Data Sheet
Negotiable