(China (Mainland))
Product Summary
The 2SC5185-T1B is a NPN epitaxial silicon transistor in super mini-mold package, which is designed for low-noise microwave amplification.
Parametrics
2SC5185-T1B absolute maximum ratings: (1)Collector to Base Voltage: 5 V; (2)Collector to Emitter Voltage: 3 V; (3)Emitter to Base Voltage: 2 V; (4)Collector Current: 30 mA; (5)Total Power Dissipation: 90 mW; (6)Junction Temperature: 150 ℃; (7)Storage Temperature: –65 to +150 ℃.
Features
2SC5185-T1B features: (1)Low Noise: NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz, NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz; (2)Super Mini-Mold package.
Diagrams
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