(China (Mainland))
Product Summary
The SST29LE010-150-4I-NH is a 128K x8 CMOS Page-Write EEPROM manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29LE010-150-4I-NH writes with a single power supply. Internal Erase/Program is transparent to the user. The SST29LE010-150-4I-NH conforms to JEDEC standard pinouts for byte-wide memories.
Parametrics
SST29LE010-150-4I-NH absolute maximum ratings: (1)Temperature Under Bias: -55℃ to +125℃; (2)Storage Temperature: -65℃ to +150℃; (3)D. C. Voltage on Any Pin to Ground Potential: -0.5V to VDD + 0.5V; (4)Transient Voltage (<20 ns) on Any Pin to Ground Potential: -1.0V to VDD + 1.0V; (5)Voltage on A9 Pin to Ground Potential: -0.5V to 14.0V; (6)Package Power Dissipation Capability (Ta = 25℃): 1.0W; (7)Through Hold Lead Soldering Temperature (10 Seconds): 300℃; (8)Surface Mount Lead Soldering Temperature (3 Seconds): 240℃; (9)Output Short Circuit Current: 100 mA.
Features
SST29LE010-150-4I-NH features: (1)Single Voltage Read and Write Operations: 5.0V-only for SST29EE010, 3.0-3.6V for SST29LE010, 2.7-3.6V for SST29VE010; (2)Superior Reliability: Endurance: 100,000 Cycles (typical), Greater than 100 years Data Retention; (3)Low Power Consumption: Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V, Standby Current: 10 μA (typical); (4)Fast Page-Write Operation: 128 Bytes per Page, 1024 Pages, Page-Write Cycle: 5 ms (typical), Complete Memory Rewrite: 5 sec (typical), Effective Byte-Write Cycle Time: 39 μs (typical).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 SST29LE010-150-4I-NH |
Greenliant |
Flash 128K X 8 150ns |
Data Sheet |
Negotiable |
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SST29LE010-150-4I-NHE |
Greenliant |
Flash 128K X 8 150ns |
Data Sheet |
Negotiable |
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