Product Summary

The MMBT5551LT1G is a high voltage transistor.

Parametrics

MMBT5551LT1G absolute maximum ratings: (1)Collector-emitter voltage, VCEO: 160Vdc; (2)Collector-base voltage, VCBO: 180Vdc; (3)Emitter-base voltage, VEBO: 6Vdc; (4)Collector current-continuous, IC: 600mAdc; (5)Electrostatic discharge, ESD: >8000V.

Features

MMBT5551LT1G features: (1)AEC-Q101 qualified and PPAP capable; (2)S prefix for automotive and other applications requiring unique site and control change requirements; (3)These devices are Pb-free, Halogen Free/BFR free and are RoHS compliant.

Diagrams

MMBT5551LT1G diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MMBT5551LT1G
MMBT5551LT1G
ON Semiconductor
Transistors Bipolar (BJT) 600mA 160V NPN
Data Sheet
0-1: $0.14
1-25: $0.09
25-100: $0.07
100-500: $0.04
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MMBT 2222A LT1
MMBT 2222A LT1
Infineon Technologies
Transistors Bipolar (BJT) AF TRANS GP BJT NPN 40V 0.6A
Data Sheet
0-1: $0.30
1-10: $0.20
10-100: $0.09
100-500: $0.04
MMBT 2907A LT1
MMBT 2907A LT1
Infineon Technologies
Transistors Bipolar (BJT) AF TRANS GP BJT PNP 60V 0.6A
Data Sheet
0-1: $0.30
1-10: $0.20
10-100: $0.09
100-500: $0.04
MMBT 3904 LT1
MMBT 3904 LT1
Infineon Technologies
Transistors Bipolar (BJT) AF TRANS GP BJT NPN 40V 0.2A
Data Sheet
0-1: $0.08
1-10: $0.07
10-100: $0.04
100-500: $0.03
MMBT 3904 LT3
MMBT 3904 LT3
Infineon Technologies
Transistors Switching (Resistor Biased) NPN Silicon Switch TRANSISTOR
Data Sheet
Negotiable 
MMBT 3906 LT1
MMBT 3906 LT1
Infineon Technologies
Transistors Bipolar (BJT) AF TRANS GP BJT PNP 40V 0.2A
Data Sheet
0-1: $0.10
1-10: $0.07
10-100: $0.05
100-500: $0.03
MMBT A06 LT1
MMBT A06 LT1

TRANSISTOR AF NPN SOT-23
Data Sheet
Negotiable