Product Summary
The M29F010B-90N1 is a 1 Mbit (128Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up of M29F010B-90N1 the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.
Parametrics
M29F010B-90N1 absolute maximum ratings: (1)Ambient Operating Temperature (Temperature Range Option: 0 to 70 ℃; (2)Ambient Operating Temperature (Temperature Range Option: –40 to 85 ℃; (3)Ambient Operating Temperature (Temperature Range Option: –40 to 125 ℃; (4)Temperature Under Bias: –50 to 125 ℃; (5)Storage Temperature: –65 to 150 ℃; (6)Input or Output Voltage: –0.6 to 6 V; (7)Supply Voltage: –0.6 to 6 V; (8)Identification Voltage: –0.6 to 13.5 V.
Features
M29F010B-90N1 features: (1)SINGLE 5V±10% supply voltage for program, erase and read operations; (2)ACCESS TIME: 45 ns; (3)programming time: 8 μs per Byte typical; (4)8 UNIFORM 16 KBytes MEMORY BLOCKS; (5)program/erase controller: Embedded Byte Program algorithm, Embedded Multi-Block/Chip Erase algorithm, Status Register Polling and Toggle Bits; (6)erase suspend and resume modes: Read and Program another Block during Erase Suspend; (7)unlock bypass program command: Faster Production/Batch Programming.
Diagrams
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M29F002BB70N1 |
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Data Sheet |
Negotiable |
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