Product Summary
The IRFR420A is a single N-channel HEXFET power MOSFET. Its applications include switch mode power supply, uninterruptible power supply, high speed power switch.
Parametrics
IRFR420A absolute maximum ratings: (1)Drain-source voltage, VDS: 500V; (2)Gate-source voltage, VGS: ±30V; (3)Continuous drain current, ID, TC=25℃: 3.3A; TC=100℃: 2.1A; (4)Pulsed drain current, IDM: 10A; (5)Linear derating factor: 0.67W/℃; (6)Single pulse avalanche energy, EAS: 140mJ; (7)Repetitive avalanche current, IAR: 2.5A; (8)Repetitive avalanche energy, EAR: 5.0mJ; (9)Maximum power dissipation, TC=25℃, PD: 83W; (10)Operating junction and storage temperature range, TJ, Tstg: -55 to +150℃; (11)Soldering recommendations for 10s: 300d℃.
Features
IRFR420A features: (1)Halogen-free according to IEC 61249-2-21-Definition; (2)Low gate charge Qg results in simple drive requirement; (3)Improved gate, avalanche and dynamic dV/dt ruggedness; (4)Fully characterized capacitance and avalanche voltage and current; (5)Effective COSS specified; (6)Compliant to RoHS directive 2002/95/EC.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRFR420A |
Vishay/Siliconix |
MOSFET N-Chan 500V 3.3 Amp |
Data Sheet |
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IRFR420APBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 3.3 Amp |
Data Sheet |
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IRFR420ATRPBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 3.3 Amp |
Data Sheet |
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IRFR420ATRLPBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 3.3 Amp |
Data Sheet |
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