(China (Mainland))
Product Summary
The FMMT617TA is an NPN silicon power transistor.
Parametrics
FMMT617TA absolute maximum ratings: (1)Collector-base voltage, VCBO: 15V; (2)Collector-emitter voltage, VCEO: 15V; (3)Emitter-base voltage, VEBO:5V; (4)Continuous collector current, IC: 3A; (5)Peak pulse current, ICM: 12A; (6)Power dissipation at Tamb=25℃, Ptot: 625mW; (7)Operating and storage temperature, Tj, Tstg: -55 to +150℃.
Features
FMMT617TA features: (1)Power dissipation: Ptot=625mW; (2)Collector current: IC=3A.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FMMT617TA |
Diodes Inc. |
Transistors Bipolar (BJT) NPN SuperSOT |
Data Sheet |
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