(China (Mainland))
Product Summary
The BFR360F is a NPN Silicon RF Transistor.
Parametrics
BFR360F absolute maximum ratings: (1)Collector-emitter voltage: 6 V; (2)Collector-emitter voltage: 15 V; (3)Collector-base voltage: 15 V; (4)Emitter-base voltage: 2 V; (5)Collector current: 35 mA; (6)Base current: 4 mA; (7)Total power dissipation: 210 mW at TS ≤ 98℃; (8)Junction temperature: 150 ℃; (9)Ambient temperature: -65 to 150 ℃; (10)Storage temperature: -65 to 150 ℃.
Features
BFR360F features: (1)Low voltage/ low current operation; (2)For low noise amplifiers; (3)For Oscillators up to 3.5 GHz and Pout > 10 dBm; (4)Low noise figure: 1.0 dB at 1.8 GHz.
Diagrams
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 BFR360F |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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BFR30 |
Other |
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Data Sheet |
Negotiable |
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BFR30 T/R |
NXP Semiconductors |
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Data Sheet |
Negotiable |
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BFR30,215 |
NXP Semiconductors |
Transistors RF Bipolar Small Signal N-CH 25V 10mA |
Data Sheet |
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BFR30,235 |
NXP Semiconductors |
Transistors RF JFET N-Channel Single '+/- 25V 10mA |
Data Sheet |
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BFR30LT1 |
ON Semiconductor |
Transistors RF JFET 25V 10mA |
Data Sheet |
Negotiable |
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BFR30LT1G |
ON Semiconductor |
Transistors RF JFET 25V 10mA |
Data Sheet |
Negotiable |
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