Product Summary
The ITS4142N is a N channel vertical power FET with charge pump, ground referenced CMOS compatible input. It is monolithically integrated in Smart SIPMOS technology. The ITS4142N has providing embedded protective functions.
Parametrics
ITS4142N maximum ratings: (1)Supply voltage Vbb -0,3 to 48 V; (2)Continuous input voltage2) VIN -10 to Vbb; (3)Load current IL: self limited A; (4)Current through input pin (DC) IIN: ±5 mA; (5)Reverse current through GND-pin3) -IGND: -0.5 A; (6)Junction temperature Tj: internal limited; (7)Operating temperature Ta: -30 to +85 ℃; (8)Storage temperature Tstg: -40 to +105 ℃; (9)Power dissipation Ptot: 1.4 W.
Features
ITS4142N features: (1)Short circuit protection; (2)Current limitation; (3)Overload protection; (4)Overvoltage protection; (5)(including load dump); (6)Undervoltage shutdown with autorestart; (7)and hysteresis; (8)Switching inductive loads; (9)Clamp of negative voltage at output; (10)with inductive loads; (11)CMOS compatible input; (12)Thermal shutdown with restart; (13)ESD - Protection; (14)Loss of GND and loss of Vbb protection; (15)Very low standby current; (16)Reverse battery protection with external resistor; (17)Improved electromagnetic compatibility (EMC).
Diagrams
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ITS4142N |
Infineon Technologies |
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Data Sheet |
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