Product Summary

The 2SJ601-Z-E1 is a MOS field effect transistor. It is designed for solenoid, motor and lamp driver.

Parametrics

2SJ601-Z-E1 absolute maximum ratings: (1)Drain to source voltage, VDSS: -60V; (2)Gate to source voltage, VGSS: 20V; (3)Drain current, ID: 36A; (4)Drain curent, ID: 120A; (5)Total power dissipation, PT: 65W; (6)Total power dissipation, PT: 1.0W; (7)Channel temperature, Tch: 150℃; (8)Storage temperature, Tstg: -55 to +150℃; (9)Single avalanche current, IAS: -35A; (10)Single avalanche energy, EAS: 123mJ.

Features

2SJ601-Z-E1 features: (1)Low on-state resistance: RDS(on)1=31mΩMAX., RDS(on)2=46mΩMAX.; (2)Low Ciss: Ciss=3300pF TYP.; (3)Built-in gate protection diode; (4)TO-251/TO-252 package.

Diagrams

2SJ601-Z-E1 diagram

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