Product Summary
The STP8NM60FP MDmesh Power MOSFET is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products.
Parametrics
Absolute maximum ratings: (1)VDS, Drain-source Voltage (VGS = 0): 600 V; (2)VDGR, Drain-gate Voltage (RGS = 20 kW): 600 V; (3)VGS, Gate- source Voltage: ± 30 V; (4)ID, Drain Current (continuous) at TC = 25℃:8 A; (5)ID, Drain Current (continuous) at TC = 100℃: 5 A; (6)IDM, Drain Current (pulsed): 32A; (7)PTOT, Total Dissipation at TC = 25℃: 30 W; Derating Factor: 0.24 W/℃; (8)dv/dt, Peak Diode Recovery voltage slope: 15 V/ns; (9)VISO, Insulation Withstand Voltage (DC): 2500 V; (10)Tj, Operating Junction Temperature: -55 to 150℃; (11)Tstg, Storage Temperature: -55 to 150 ℃.
Features
Features: (1)typical rds(on) = 0.9Ω; (2)high dv/dt and avalanche capabilities; (3)100% avalanche tested; (4)low input capacitance and gate charge; (5)low gate input resistance.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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STP8NM60FP |
STMicroelectronics |
MOSFET N-Ch 600 Volt 8 Amp |
Data Sheet |
Negotiable |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
STP80N03L-06 |
Other |
Data Sheet |
Negotiable |
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STP80N05-09 |
Other |
Data Sheet |
Negotiable |
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STP80N06-10 |
Other |
Data Sheet |
Negotiable |
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STP80N20M5 |
STMicroelectronics |
MOSFET N-Ch 200V 0.019 61A Mdmesh V |
Data Sheet |
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STP80NE03L-06 |
STMicroelectronics |
MOSFET N-Ch 30 Volt 80 Amp |
Data Sheet |
Negotiable |
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STP80NE06-10 |
STMicroelectronics |
MOSFET RO 511-STP80NF06 |
Data Sheet |
Negotiable |
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