(China (Mainland))
Product Summary
The IPD09N03LA is a OptiMOS 2 Power-Transistor.
Parametrics
IPD09N03LA absolute maximum ratings: (1)Continuous drain current: TC=25℃:50A, TC=100℃:45A; (2)Pulsed drain current:350A; (3)Avalanche energy, single pulse:75mJ; (4)Reverse diode dv /dt:6kV/μs; (5)Gate source voltage:±20V; (6)Power dissipation:63W; (7)Operating and storage temperature:-55℃ to +175℃; (8)IEC climatic category; DIN IEC 68-1 :55/175/56.
Features
IPD09N03LA features: (1)Ideal for high-frequency dc/dc converters; (2)Qualified according to JEDEC for target application; (3)N-channel, logic level; (4)Excellent gate charge x RDS(on) product (FOM); (5)Superior thermal resistance; (6)175℃ operating temperature.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 IPD09N03LA |
Other |
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Data Sheet |
Negotiable |
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IPD09N03LA G |
Infineon Technologies |
MOSFET N-CH 25V 50A |
Data Sheet |
Negotiable |
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