Product Summary
The SI1912EDH-T1-E3 is a dual N-channel MOSFET. Its applications include load switching, PA switch, level switch.
Parametrics
SI1912EDH-T1-E3 absolute maximum ratings: (1)Drain-source voltage, VDS: 20V; (2)Gate-source voltage, VGS: ±12V; (3)Continuous drain current, TA=25℃, ID: 1.13A; TA=85℃, ID: 0.81A; (4)Continuous diode-current, IS: 0.48A; (5)Pulsed drain current, IDM: 4A; (6)Maximum power dissipation, TA=25℃, PD: 0.57W; TA=85℃, PD: 0.30W; (7)Operating Junction and storage temperature range, TJ, Tstg: -55 to 150℃.
Features
SI1912EDH-T1-E3 features: (1)Halogen-free according to IEC 61249-2-21 Definition; (2)TrenchFET power mosfets: 1.8V rated; (3)ESD protected: 2000V; (4)Thermally enhanced SC-70 package; (5)Compliant to RoHS directive 2002/95/EC.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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SI1912EDH-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 1.28A |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
SI1900DL-T1 |
Vishay/Siliconix |
MOSFET 30V 0.63A |
Data Sheet |
Negotiable |
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SI1900DL-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 0.63A |
Data Sheet |
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Si1901DL |
Other |
Data Sheet |
Negotiable |
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SI1901DL-T1 |
Vishay/Siliconix |
MOSFET 20V 0.18A |
Data Sheet |
Negotiable |
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Si1902DL |
Other |
Data Sheet |
Negotiable |
|
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SI1902DL-T1 |
Vishay/Siliconix |
MOSFET 20V 0.70A |
Data Sheet |
Negotiable |
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