Product Summary

The SI1912EDH-T1-E3 is a dual N-channel MOSFET. Its applications include load switching, PA switch, level switch.

Parametrics

SI1912EDH-T1-E3 absolute maximum ratings: (1)Drain-source voltage, VDS: 20V; (2)Gate-source voltage, VGS: ±12V; (3)Continuous drain current, TA=25℃, ID: 1.13A; TA=85℃, ID: 0.81A; (4)Continuous diode-current, IS: 0.48A; (5)Pulsed drain current, IDM: 4A; (6)Maximum power dissipation, TA=25℃, PD: 0.57W; TA=85℃, PD: 0.30W; (7)Operating Junction and storage temperature range, TJ, Tstg: -55 to 150℃.

Features

SI1912EDH-T1-E3 features: (1)Halogen-free according to IEC 61249-2-21 Definition; (2)TrenchFET power mosfets: 1.8V rated; (3)ESD protected: 2000V; (4)Thermally enhanced SC-70 package; (5)Compliant to RoHS directive 2002/95/EC.

Diagrams

SI1912EDH-T1-E3 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SI1912EDH-T1-E3
SI1912EDH-T1-E3

Vishay/Siliconix

MOSFET 20V 1.28A

Data Sheet

0-1: $0.35
1-10: $0.25
10-100: $0.21
100-250: $0.18
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(USD)
Quantity
SI1900DL-T1
SI1900DL-T1

Vishay/Siliconix

MOSFET 30V 0.63A

Data Sheet

Negotiable 
SI1900DL-T1-E3
SI1900DL-T1-E3

Vishay/Siliconix

MOSFET 30V 0.63A

Data Sheet

0-1: $0.25
1-10: $0.23
10-100: $0.22
100-250: $0.20
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Data Sheet

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SI1901DL-T1

Vishay/Siliconix

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Data Sheet

Negotiable 
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Data Sheet

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Vishay/Siliconix

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Data Sheet

Negotiable