IRF7416TR

soic-8, Power MOSFET, Vdss -30V, Rds(on) 0.02ohm, -10A, International Rectifier, -5.0 V/ns

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Price:: US $0.24~0.28 / piece [Get Latest Price]

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	US $0.24~0.28

PartNumber:: IRF7416TR

Brand:: International Rectifier - IR | Pack: SOIC | D/C: 11+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-07-20

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Part Number:IRF7416TR
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Product Summary

Fifth Generation HEXFETs of the IRF7416TR from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized IRF7416TR design that HEXFET Power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple device can be used in an application with dramatically reduced board space. The package of the IRF7416TR is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.

Parametrics

IRF7416TR maximum ratings: absolute maximum ratings: (1)ID @ TA = 25℃ Continuous Drain Current, VGS @ -10V: -10A; (2)ID @ TA = 70℃ Continuous Drain Current, VGS @ - 10V: -7.1A; (3)IDM Pulsed Drain Current: -45; (4)PD @TA = 25℃ Power Dissipation: 2.5; (5)Linear Derating Factor: 0.02 mW/℃; (6)VGS Gate-to-Source Voltage: ± 20 V; (7)EAS Single Pulse Avalanche Energy: 370 mJ; (8)dv/dt Peak Diode Recovery dv/dt: -5.0 V/ns; (9)TJ, TSTG Junction and Storage Temperature Range: -55 to + 150 ℃.

Features

IRF7416TR features: (1)Generation V Technology; (2)Ultra Low On-Resistance; (3)P-ChanneMosfet; (4)Surface Mount; (5)Available in Tape & Reel; (6)Dynamic dv/dt Rating; (7)Fast Switching.