(China (Mainland))
Product Summary
The IRF7103TRPBF is a HEXFET power MOSFET.
Parametrics
IRF7103TRPBF absolute maximum ratings: (1)Continuous drain current, TA=25℃, ID: 3A; TA=70℃, ID: 2.3A; (2)IDM, pulsed drain current: 10A; (3)Power dissipation: 2.0W; (4)Linear derating factor: 0.016W/℃; (5)VGS, gate-to-source voltage: ±20V; (6)dv/dt, Peak diode recovery dv/dt: 4.5V/nS; (7)TJ, TSTG, junction and storage temperature range: -55 to +150℃.
Features
IRF7103TRPBF features: (1)Dynamic dV/dt rating; (2)advanced process technology; (3)Surface mount; (4)ultra-low on-resistance; (5)Available in Tape and Reel; (6)Fast switching; (7)Dual N-channel MOSFET; (8)Lead Pb-free available.
Diagrams
| Image | Part No | Mfg | Description |  |
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 IRF7103TRPBF |
International Rectifier |
MOSFET MOSFT DUAL NCh 50V 3.0A |
Data Sheet |
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