Product Summary

The IPB037N06N3 is a OptiMOS3 Power-Transistor.

Parametrics

IPB037N06N3 absolute maximum ratings: (1)Continuous drain current:TC=25℃:90A, TC=100℃:90A; (2)Pulsed drain current:360A; (3)Avalanche energy, single pulse:165mJ; (4)Gate source voltage:±20V; (5)Power dissipation:188W; (6)Operating and storage temperature:-55℃ to 175℃; (7)IEC climatic category; DIN IEC 68-1:55/175/56.

Features

IPB037N06N3 features: (1)for sync. rectification, drives and dc/dc SMPS; (2)Excellent gate charge x RDS(on) product (FOM); (3)Very low on-resistance RDS(on); (4)N-channel, normal level; (5)Avalanche rated; (6)Qualified according to JEDEC; (7)for target applications; (8)Pb-free plating; RoHS compliant; (9)Halogen-free according to IEC61249-2-21.

Diagrams

IPB037N06N3 test circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IPB037N06N3 G
IPB037N06N3 G
Infineon Technologies
MOSFET OptiMOS 3 PWR TRANST 60V 90A
Data Sheet
0-1: $1.35
1-10: $1.21
10-100: $1.10
100-250: $0.84
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IPB009N03L G
IPB009N03L G
Infineon Technologies
MOSFET OptiMOS 3 PWR TRANS 30V 180A
Data Sheet
0-1: $2.06
1-10: $1.84
10-100: $1.51
100-250: $1.28
IPB010N06N
IPB010N06N
Infineon Technologies
MOSFET 60V TO-263
Data Sheet
Negotiable 
IPB010N06NATMA1
IPB010N06NATMA1
Infineon Technologies
MOSFET MV POWER MOS
Data Sheet
0-1: $3.72
1-10: $3.31
10-100: $3.08
100-500: $2.75
500-1000: $2.14
IPB011N04L G
IPB011N04L G
Infineon Technologies
MOSFET OptiMOS 3 PWR TRANS 40V 180A
Data Sheet
0-1: $2.60
1-10: $2.32
10-100: $1.90
100-250: $1.63
IPB011N04N G
IPB011N04N G
Infineon Technologies
MOSFET OptiMOS 3 PWR TRANS 40V 180A
Data Sheet
0-605: $1.54
605-1000: $1.30
1000-2000: $1.23
2000-5000: $1.18
IPB014N06N
IPB014N06N
Infineon Technologies
MOSFET 60V TO-263
Data Sheet
Negotiable