(China (Mainland))
Product Summary
The 2SD1898 is a power transistor.
Parametrics
2SD1898 absolute maximum ratings: (1)Collector-base voltage, VCBO: 100V; (2)Collector-emitter voltage, VCEO: 80V; (3)Emitter-base voltage, VEBO: 5V; (4)Collector current, IC: 1A; (5)Collector power dissipation, PC: 0.5W; (6)Junction temperature, Tj: 150℃; (7)Storage temperature, Tstg: -55 to +150℃.
Features
2SD1898 features: (1)High VCEO, VCEO=80V; (2)High IC, IC=1A(DC); (3)Good hFE linearity; (4)Low VCE(sat); (5)Complements the 2SB 1260/2SB1241/2SB1181.
Diagrams
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Pricing (USD) |
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 2SD1898 |
Other |
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Data Sheet |
Negotiable |
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2SD1898 HRAT100R |
Other |
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Data Sheet |
Negotiable |
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2SD1898T100Q |
ROHM Semiconductor |
Transistors Bipolar (BJT) NPN 80V 1A |
Data Sheet |
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2SD1898T100P |
ROHM Semiconductor |
Transistors Bipolar (BJT) DVR NPN 80V 1A |
Data Sheet |
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2SD1898 T100 R |
Other |
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Data Sheet |
Negotiable |
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2SD1898R |
Other |
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Data Sheet |
Negotiable |
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2SD1898T100R |
ROHM Semiconductor |
Transistors Bipolar (BJT) NPN 80V 1A |
Data Sheet |
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