Product Summary

The BSS84 is a P-channel enhancement mode field effect transistor.

Parametrics

BSS84 absolute maximum ratings: (1)VDSS, drain-source voltage: -50V; (2)VGSS, gate-source voltage: ±20V; (3)ID, drain current-continuous: -0.13A; pulsed: -0.52A; (4)PD, maximum power dissipation: 0.36W; Derate above 25℃: 2.9mW/℃; (5)TJ, TSTG, operating and storage junction temperature range: -55 to +150℃; (6)TL, maximum lead temperature for soldering purposes: 300℃.

Features

BSS84 features: (1)-0.13A, -50V, RDS=10Ω@VGS=-5V; (2)Voltage controlled p-channel small signal switch; (3)High density cell design for low RDS; (4)High saturation current.

Diagrams

BSS84 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSS84_D87Z
BSS84_D87Z
Fairchild Semiconductor
MOSFET P-Ch Spec Enhance Mode Field Effect
Data Sheet
Negotiable 
BSS8402DW-7
BSS8402DW-7
Diodes Inc.
MOSFET 60 / -50V 200mW
Data Sheet
Negotiable 
BSS8402DW-7-F
BSS8402DW-7-F
Diodes Inc.
MOSFET 60 / -50V 200mW
Data Sheet
0-1: $0.33
1-10: $0.26
10-100: $0.17
100-500: $0.15
BSS84-7
BSS84-7
Diodes Inc.
MOSFET -50V 250mW
Data Sheet
Negotiable 
BSS84-7-F
BSS84-7-F
Diodes Inc.
MOSFET -50V 250mW
Data Sheet
0-1: $0.25
1-10: $0.18
10-100: $0.08
100-500: $0.07
BSS84AKM,315
BSS84AKM,315
NXP Semiconductors
MOSFET P-CH -50 V -230 mA 50V 230mA
Data Sheet
0-6000: $0.06
6000-10000: $0.05
BSS84LT1G
BSS84LT1G
ON Semiconductor
MOSFET 50V 130mA P-Channel
Data Sheet
0-1: $0.25
1-25: $0.14
25-100: $0.10
100-500: $0.06
BSS84P H6327
BSS84P H6327
Infineon Technologies
MOSFET P-KANAL
Data Sheet
0-1: $0.19
1-10: $0.16
10-100: $0.10
100-500: $0.07